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| geometry process details principal device types 2n2905a 2n2907a cmpt2907a cmst2907a cxt2907a czt2907a pn2907a gross die per 4 inch wafer 30,475 process cp591v small signal transistor pnp - amp/switch transistor chip process epitaxial planar die size 19 x 19 mils die thickness 7.1 mils base bonding pad area 3.5 x 4.3 mils emitter bonding pad area 3.5 x 4.5 mils top side metalization al - 30,000? back side metalization au - 18,000? backside collector r1 www.centralsemi.com r3 (22-march 2010)
process cp591v typical electrical characteristics www.centralsemi.com r3 (22-march 2010) |
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